Transient Growth Bands In Silicon Nitride Cooled In Rare-Earth-Based Glass

Silicon nitride (SiN4) particles embedded in various R-Si-Al-0-N glasses (R=La, Nd, Gd, Yb) have been systematically studied by high-resolution transmission electron microscopy and by analytical electron microscopy. The particles typically show an internal growth band, which is attributed to the enhanced growth of the particles in the supersaturated silicate liquid during cooling and reheating. The electron energy-loss spectroscopy and energy dispersive X-ray spectroscopy analysis reveal that the growth band typically contains lanthanide elements.

Author
C Wang Et Al
Origin
Inst Fur Werkstoffwissenschaft, Stuttgart, Frg
Journal Title
J Am Ceram Soc 80 6 1997 1397-1404
Sector
Special Glass
Class
S 1152

Request article (free for British Glass members)

Transient Growth Bands In Silicon Nitride Cooled In Rare-Earth-Based Glass
J Am Ceram Soc 80 6 1997 1397-1404
S 1152
Are you a member?
This question is for testing whether or not you are a human visitor and to prevent automated spam submissions.
5 + 4 =
Solve this simple math problem and enter the result. E.g. for 1+3, enter 4.