The compressive creep behaviour of a high-purity silicon nitride ceramic with and without the addition of Ba was studied at 1400 deg C. Two distinct creep stages were observed during high-temperature deformation of both materials. Transmission electron microscopy (TEM) hasbeen used to characterize the intergranular glass film thickness. Statistical analysis of a number of grain-boundary films indicates that the film thickness is confied to a narrow range in the as-sintered materials. However, the mean thickness is greater in the Ba-doped ceramic than in the undoped material.
Origin
Mcmaster University,Ontario, Canada
Journal Title
J Am Ceram Soc 80 3 1997 685-691
Sector
Glass Ceramics
Class
GC 280