Redistribution Of A Grain-Boundary Glass Phase During Creep Of Silicon Nitride Ceramics

The compressive creep behaviour of a high-purity silicon nitride ceramic with and without the addition of Ba was studied at 1400 deg C. Two distinct creep stages were observed during high-temperature deformation of both materials. Transmission electron microscopy (TEM) hasbeen used to characterize the intergranular glass film thickness. Statistical analysis of a number of grain-boundary films indicates that the film thickness is confied to a narrow range in the as-sintered materials. However, the mean thickness is greater in the Ba-doped ceramic than in the undoped material.

Author
Q Jin Et Al
Origin
Mcmaster University,Ontario, Canada
Journal Title
J Am Ceram Soc 80 3 1997 685-691
Sector
Glass Ceramics
Class
GC 280

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Redistribution Of A Grain-Boundary Glass Phase During Creep Of Silicon Nitride Ceramics
J Am Ceram Soc 80 3 1997 685-691
GC 280
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