An analysis of the growth by molecular beam epitaxy technique of InAs self-assembling quantum dots (SAQDs) on GaAs buffer layer surface was exposed to an in situ annealing treatment was carried out. In the annealing process the GaAs buffer layer surface was exposed to high temperatures for a few seconds with the shutter of an arsenic Knudsen cell closed. In order to obtain InAs/GaAs (100) quantum dot samples with different annealing times and temperatures the Stranski-Krastanov growth method was applied. A raman study in the range of 240 and 340 cm-1 at 18K and at room temperature (300K) with He-Ne laser was performed. The TO and LO-GaAs modes were identified. A blue shift of these modes indicates strain effects or structural disorder. The photoreflectance (PR) spectra in the range of 0.9 and 1.35 eV presented transitions associated with SAQDs.
