Pbti03-Pb0-Si02 Glass-Ceramic Thin Film By A Sol-Gel Process

PbTi03-Pb0-Si02 glass-ceramic thin films were produced by a sol-gel process. The crystallization of PT occurred at -700 deg C and was higher than that in PT-Pb0-B203 sol-gel glass-ceramics. A pinhole-free thin film was obtained by a rapid thermal annealing process when the designed glass-forming phase content in the thin film was >24 vol%. The dielectric constant was 219 and the dielectric loss was 0.04 in the 0.06PT-0.4(Pb0-Si02) film that was fired at 700 deg C.

Author
K Saegusa
Origin
Tsukuba Research Labs, Japan
Journal Title
J Am Ceram Soc 80 10 1997 1510-1516
Sector
Glass Ceramics
Class
GC 290

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Pbti03-Pb0-Si02 Glass-Ceramic Thin Film By A Sol-Gel Process
J Am Ceram Soc 80 10 1997 1510-1516
GC 290
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