The apparent change in activation energy describing the parabolic rate constant for the passive oxidation of SiC is examined. New data are combined with re-evaluated previous results to determine the influences of crystalliity, impurity, contamination, and multiple flux mechanisms. The results suggest that the high-temperature transition from interstitial-dominant to network-dominant oxygen transport is a property of amorphous Si02 s
Origin
University Of Pennsylvania, Usa
Journal Title
J Am Ceram Soc 84 11 2001 2607-2616
Sector
Special Glass
Class
S 2295