The positron lifetime characteristics for the same compns of glasses prepd. with different coolings are within statistical error. The transition of synthesis at ~600o (from 750 and 950o) causes a shift of the I2 curve to higher values. With the addn. of SnSe the intensity significantly increases and then starting from 4% SnSe it decreases. This id probably due to Sn insertion providing dangling bonds in the polymer structure of As2Se3 and to the Sn(IV) presence in As2Se3 glasses. This demonstrated the sensitivity of the positron lifetime method to chalcogenide glass structures. The defect conc. is max. with a small concn. of SnSe.
Origin
Unknown
Journal Title
Inst.Chem.Phys.117334 Moscow,(Ussr). Phys.Status Solidi A 69 2 1980 K185-K189 (Eng)
Sector
Primary Papers
Class
PP 1501