Nitrogen ion irradiation at an acceleration voltage of 10 keV was carried out onto sputtered Ti films of 5 and 20nm in thickness on glass in order to enhance the adhesion strengths of the films. The adhesion strength strongly depended on the ion dose: the strength showed a maximum at 1x1016 and 7~8x1016 ions/cm2 for the films of 5 and 20nm in thickness, respectively. Auger Electron Spectroscopy, X-ray photoelectron spectroscopy and infrared reflection analyses showed that a mixed layer was formed at the Ti/glass interface accompanied with chemical bonds of Si-Ti and Si-0-Ti. Si-N bond expected from the nitrogen ion irradiation was not observed.
Origin
Unknown
Journal Title
Asahi Research Report 48 1998 1-9
Sector
Special Glass
Class
S 1696