Cu2ZnSnSe4 (CZTSe) films have been fabricated by sputtering of Cu-Zn-Sn metallic targets on the TiN-coated Mo/glass substrates, followed by the selenization at 500-600 deg C for one hour under a compensation disk. Three targets of A, B and C, with different ratios of Cu, Zn, and Sn elements were fabricated b hot pressing the constitutive powder mixture. The effects of the target's compositions on the growth behaviour, microstructural characteristics, and electrical properties of CZTSe films have been investigated.
Origin
Natioinal Taiwan University Of Science, Taipei, Taiwan
Journal Title
Mat Sci Eng B 186 2014 94-100 (Society of Glass Technology)
Sector
Special Glass
Class
S 4127