Deep Reactive Ion Etching Of Lead Zirconate Titanate Using Sulfur Hexafluoride Gas

A deep reactive ion etching (RIE) technique that uses sulfur hexafluoride (SF6) gas has been developed for lead zirconate titanate (Pb(Zr,Ti)O3, PZT) three-dimensional microfabrication from PZT ceramic blocks. The etching was performed by using an inductively coupled plasma that was generated in a narrow-gap vacuum chamber. The etch depth was 70um with a maximum etch rate of 0.3 um/min and a selectivity of PZT to the electroplated nickel mask of >35:1. The sidewalls of the PZT structures were tapered, with base angles of ~75 deg. Both postive RIE lag and unexpected ultrafine-slit etching phenomena were observed.

Author
S Wang Et Al
Origin
Tohoku University, Japan
Journal Title
J Am Ceram Soc 82 5 1999 1339-1441
Sector
Special Glass
Class
S 1665

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Deep Reactive Ion Etching Of Lead Zirconate Titanate Using Sulfur Hexafluoride Gas
J Am Ceram Soc 82 5 1999 1339-1441
S 1665
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