Resonance Effects In Photoluminescence From Deep Traps In Cdsxse(1-X) Doped Glasses

Photoluminescence studies on CdSxSe(1-x) semiconductor doped glasses with gap energies ranging from 2 to 3 eV (400-600nm) are presented.

Author

M Ivanda Et Al

Origin

Unknown

Journal Title

J Appl Phys (Usa) 82 6 1997 3116-3119

Sector

Special Glass

Class

S 1601b

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Your chosen publication Resonance Effects In Photoluminescence From Deep Traps In Cdsxse(1-X) Doped Glasses

Journal Title J Appl Phys (Usa) 82 6 1997 3116-3119

Class S 1601b

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