A Novel Mask Technology Of Glass Hf Etching And Application In Photovoltaic Cells

In the process of glass etching, the design of mask and its preparation technology are very important, which directly relate to the quality of the process and the graphic structure of etching. Herein, to eliminate pinholes and minimize the side etching in the process of glass HF etching, a novel mask technology for glass deep etching was investigated. In order to compare the etching effect of glass, four different kinds of mask are prepared. They are Cu, or combinations of Cr and Cu with different thickness, respectively. The multilayer metal combination Cu/Cr/Cu/Cr with the thickness of them are 200 nm, 50 nm, 200 nm and 50 nm, is good to eliminate the pinholes and minimize the side etching, and it is proved theoretically by first principles calculation and stress simulation. This multilayer etching mask can be prepared by standard lithography and a metal etching process, and has been used successfully to fabricate light trapping regular pit arrays on the glass surface for photovoltaic cells, so this technology has broad application prospects in many fields of micro-electromechanical systems.