The flow points for borophosphosilicate glasses made from alkoxide organic sources were lower than those for borophosphosilicate glasses from inorganic sources. They also showed good dielectric planarising capability as required for the step coverage of dynamic random access memory cells. MOS capacitors passivated with these glasses had normal current - voltage curves, which befitted their use as insulators in passivation. A possible device planarisation method was briefly discussed.
Origin
Toshiba Ulsi Research Centre, Japan
Journal Title
Glass Technology 35 4 1994 186-188
Sector
Special Glass
Class
S 818