Development work was conducted on N+PN+PN+ Poly silicon light-emitting devices which are compatible with silicon-based integrated circuit technology. The emission characteristics of visible light by a monolithically integrated Poly-Si diode under reverse basis is discussed.
Origin
University Of Electronic Science & Technol Of China, Chengdu
Journal Title
Mat Sci & Eng B 231 2018 28-31
Sector
Special Glass
Class
S 4486