Light Emission From A Poly-Silicon Device With Carrier Injection Engineering

Development work was conducted on N+PN+PN+ Poly silicon light-emitting devices which are compatible with silicon-based integrated circuit technology. The emission characteristics of visible light by a monolithically integrated Poly-Si diode under reverse basis is discussed.

Author
K Xu Et Al
Origin
University Of Electronic Science & Technol Of China, Chengdu
Journal Title
Mat Sci & Eng B 231 2018 28-31
Sector
Special Glass
Class
S 4486

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Light Emission From A Poly-Silicon Device With Carrier Injection Engineering
Mat Sci & Eng B 231 2018 28-31
S 4486
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