Laser-Recrystallised Silicon Thin-Film Transistors On Expansion-Matched 800 Degrees C Glass

Laser-recrystallised silicon thin-film transistors have been fabricated on a novel potentially low-cost glass substrate.

Author

J R Troxell, M I Harrington, R A Miller

Origin

General Motors Research Laboratories, Corning Glass Works

Journal Title

Ieee Electron Device Letters 1987 Edl-8 12 576-578

Sector

Special Glass

Class

S 241

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Your chosen publication Laser-Recrystallised Silicon Thin-Film Transistors On Expansion-Matched 800 Degrees C Glass

Journal Title Ieee Electron Device Letters 1987 Edl-8 12 576-578

Class S 241

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