Grain Growth Studies Of Silicon Nitride Dispersed In An Oxynitride Glass

Isothermal growth of B-Si3N4 crystals dispersed in an oxynitride glass (Y-Si-Al-O-N) was studied by electron microscopy after heat treatment at temperatures between 1550 and 1640 deg C for 1 to 18 hours. The B-crystals exhibited growth striations introduced by intermediate coolings and these striations were used for developing a sophisticated technique for analysis of growth.

Author
M Kramer Et Al
Origin
Max-Planck-Inst Metallforschung, Stuttgart, Germany
Journal Title
J Am Ceram Soc 76 11 1993 2778-2784
Sector
Special Glass
Class
S 771

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Grain Growth Studies Of Silicon Nitride Dispersed In An Oxynitride Glass
J Am Ceram Soc 76 11 1993 2778-2784
S 771
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