Electrical Conduction Mechanism In Amorphous Thin Films Of The System Ge20Bixse70-Xte10

An investigation of the electrical conduction mechanism in Ge20BixSe70-xTe10(x=7,9,11,13) thin films in the temperature range of 300-425K with both symmetric and asymmetric electrodes is reported. The results were interpreted in terms of a Poole-Frenkel type of conduction mechanism operating over the entire range of temperature and field strength.

Author
S Rahman & K S Kumar
Origin
Osmania University, India
Journal Title
Phys Chem Glasses 37 2 1996 76-78
Sector
Special Glass
Class
S 977

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Electrical Conduction Mechanism In Amorphous Thin Films Of The System Ge20Bixse70-Xte10
Phys Chem Glasses 37 2 1996 76-78
S 977
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