Characteristics Of Metal Oxide Semiconductor Capacitors With Different Types Of Insulation For Use In Very Large Scale Integrated Packages

The relationships between the infrared absorption spectra of bias sputtered SiO2 glass, plasma deposited SiO films on Si wafers and the characteristics of metal oxide semiconductors passivated by these films have been investigated.

Author
K Kobayashi
Origin
Toshiba Ulsi Research Centre
Journal Title
Glass Technology 1990 31 1 31-32
Sector
Special Glass
Class
S 358

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Characteristics Of Metal Oxide Semiconductor Capacitors With Different Types Of Insulation For Use In Very Large Scale Integrated Packages
Glass Technology 1990 31 1 31-32
S 358
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